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STD11NM50N STF11NM50N, STP11NM50N N-channel 500 V, 0.4 9 A MDmeshTM II Power MOSFET , in DPAK, TO-220FP and TO-220 Features RDS(on) Type VDSS @TJmax ID max 3 1 3 STD11NM50N 2 DPAK 1 STF11NM50N 550 V < 0.47 9A STP11NM50N TO-220 100% avalanche tested 3 Low input capacitances and gate charge 1 2 Low gate input resistance TO-220FP Application Switching applications Figure 1. Internal schematic diagram Description This second generation of MDmeshTM technology, applies the benefits of the multiple drain process to STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. Table 1. Device summary Order codes Marking Package Packaging STD11NM50N 11NM50N DPAK Tape and reel STF11NM50N 11NM50N TO-220FP Tube STP11NM50N 11NM50N TO-220 Tube April 2010 Doc ID 17156 Rev 2 1/16 www.st.com 16 Contents STD11NM50N, STF11NM50N, STP11NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ...